Datasheet4U Logo Datasheet4U.com

10N65 - N-CHANNEL POWER MOSFET

General Description

The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics.

Key Features

  • S.
  • RDS(ON) < 0.86Ω@VGS =10V.
  • Low gate charge ( typical 44 nC).
  • Low Crss ( typical 18 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • SYMBOL Power MOSFET.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
10N65 N-CHANNEL MOSFET CHONGQING PINGYANG
10N65 N-Channel MOSFET LGE
10N65 650V N Channel Power MOSFET JINAN JINGHENG
10N65B N-CHANNEL MOSFET CHONGQING PINGYANG
10N65F N-CHANNEL MOSFET CHONGQING PINGYANG

Other Datasheets by Unisonic Technologies

Part Number Description
10N65-C N-CHANNEL POWER MOSFET
10N65-Q N-CHANNEL POWER MOSFET
10N65K N-CHANNEL POWER MOSFET
10N65K-MT N-CHANNEL POWER MOSFET
10N65T 10A 650V N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
UNISONIC TECHNOLOGIES CO., LTD 10N65 10A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) < 0.